HS25N06DA N沟道60V,MOSFET

深圳市硕实科技有限公司供应原装homsemi mosfet  hs25n06da to252封装如有需要可致电联系0755-83040406

description 

the hs25n06da is the n-channel logic enhancement mode power fieldeffect transistors are produced using high cell
density, dmos trench technology.this high density process isespecially tailored to minimize on-state resistance.these
devices are particularly suited for low voltage application.

features
vds 60v
rds(on)max. 35mΩ
id 25a
●high density cell design for ultra low
rds(on)
● excellent package for good heat
pin configuration dissipation
order number package
hs25n06da to-252

maximum ratings (tc = 25℃ unlessotherwise noted*) 

parameter symbol ratings units
drain-source voltage vdss 60 v
gate-source voltage vgss ±20 v
continuous drain current tc=25℃ id 25* a
tc=100℃ 14* a
pulsed drain current idm 60 a
power dissipation tc=25℃ pd 45 w
derate above 25℃ 0.3
single pulse avalanche energy（note 1） eas 72
operating junction and storage temperature range tj,tstg -55~+175℃
* dran current limited by maximum junction temperature.
1：eas condition:l=0.5mh, vdd=30v, rg=25Ω,tj=25℃.
thermal characteristics
parameter symbol ratings units
thermal resistance, case to sink typ. rthcs 0.5 ℃/w
thermal resistance junction to case. rthjc 3.3 ℃/w
thermal resistance junction to ambient. rthja 110 ℃/w

3 to-252