定向凝固炉 硅锗铜金银 2000（℃）

适用范围硅 锗 铜 金 银炉膛高温度2000（℃）工作温度1800（℃）类型定向凝固

本产品用于半导体材料提纯

多晶硅定向凝固炉（简称结晶炉）polycrystalline silicondirectional solidify furnace(crystallize furnace for short)

用于used in

太阳能级硅锭制造，也可以用于其他半导体材料提纯。

making solar energy silicon ingot and purifying other transistormaterials

特点feature

控制精度高，结晶速度自由调节

higher precision for the control and free adjusting crystallizespeed

采用感应熔炼法，增加溶液搅拌，熔炼速度快

adopt induction smelting, increase solution stirring and thesmelting speed is fast.

定向凝固保温采用特制加热电源

adopt specially made heating power for the directional solidifykeeping temperature

具有三相电流平衡，维护费用低

there are three-phase current balance and lower maintenance

采用恒温度控制仪，可设置148段加热工艺曲线

adopt constant temperature control apparatus and you can set 148heating technology curves

炉室采用三室真空炉体，真空度高，抽气速度快

adopt three-house vacuum chamber for the furnace with highervacuum and faster air pump

主要技术参数main techni

熔炼容量：10-300kg capacity ofsmelting

电源功率：50-400kw power

升温速率：40℃/min raising temperaturespeed

炉温均匀性：±5℃ even of furnacetemperature

极限真空度：6.67×10-2pa limitvacuum

压升率：0.01pal/s rate of raising voltage

额定充气压力：0.05mpa rated giving airpressure

铸锭方式：下降定向凝固 the way of ingotcasting: descending directional solidify

伺服控制范围：0.01mm-6mm/min range forserve control

定向凝固速率：0.03mm-0.5mm/min rate ofdirectional solidify

坩埚上升速度：80-100 mm/min raising speedof crucible