EM6AA160TSE-5G SDRAM EtronTech 钰创 TSSOP66 全新原装现货集成电路

overview 

the em6aa160sdram is a high-speed cmos  double datarate synchronous dram containing 256  mbits. it isinternally configured as a quad 4m x 16  dram with asynchronous interface (all signals are  registered onthe positive edge of the clock signal,  ck). dataoutputs occur at both rising edges of ck  and ck.read and write accesses to the sdram  are burstoriented; accesses start at a selected location and continuefor a programmed number of locations  in aprogrammed se accesses begin with the registrationof a bankactivate command which is  then followedby a read or write command. the  em6aa160provides programmable read or write  burst lengthsof 2, 4, or 8. an auto precharge function  may be enabledto provide a self-timed row precharge that isinitiated at the end of the burst se the refreshfunctions, either auto or self refresh are easy to use. inaddition, em6aa160 features programmable dll option. byhaving a programmable mode register  and extendedmode register, the system can choose  the mostsuitable modes to maximize its performance. these devicesare well suited for applications re high memorybandwidth; result in a device particularly wellsuited to high performance main memory and graphicsapplications.