功率器件参数测试

服务介绍

随着技术发展，第三代半导体功率器件开始由实验室阶段步入商业应用，未来应用潜力巨大，这些新型器件测试要求更高的电压和功率水平，更快的开关时间。

测试周期：

根据标准、试验条件及被测样品量确定

产品范围：

mosfet、igbt、diode、bjt，第三代半导体器件等分立器件，以及上述元件构成的功率模块

测试项目：

静态参数符号

drain to source breakdownvoltagebvdss

drain leakage currentidss

gate leakage currentigss

gate threshold voltagevgs(th)

drain to source onresistancerds(on)

drain to source on voltagevds(on)

body diode forward voltagevsd

internal gate resistancerg

input capacitancecies

output capacitancecoes

reverse transfer capacitancecres

transconductancegfs

gate to source plateauvoltagevgs(pl)

动态参数符号

turn-on delay timetd(on)

rise timetr

turn-off delay timetd(off)

fall timetf

turn-on energyeon

turn-off energyeoff

diode reverse recovery timetrr

diode reverse recoveryrr

diode peak reverse recoverycurrentirrm

diode peak rate of fall of reverse

recovery currentdirr/dt

total gateg

gate-emittergc

gate-collectorge

其他参数符号

thermal resistancerth

unclamped inductive switchinguis

reverse biased safe operatingarearbsoa

short circuit safe operationareascsoa