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台积电和三星这两大芯片代工商的制程工艺，均已提升到了5nm，更先进的3nm也在按计划推进中，台积电3nm工艺的芯片生产工厂更是已经建成，计划在今年风险试产，明年下半年大规模量产。但产业链方面的消息显示，台积电和三星3nm制程工艺的研发均遇到了挑战，遇到了不同的关键技术瓶颈，研发进度也不得不推迟。

台积电ceo魏哲家此前在财报分析师电话会议上透露的消息显示，他们的3nm工艺仍将采用成熟的鳍式场效应晶体管技术（finfet）。而三星的3nm工艺则由不同，外媒称他们将采用环绕栅极晶体管技术（gaa）。

目前还不清楚台积电和三星3nm工艺研发过程中遇到的关键瓶颈，会对研发进程造成多大的影响，是否会影响到终的量产时间也还不得而知。

对于台积电的3nm工艺，外媒此前在报道中称他们准备了4波产能，首波产能中的大部分将留给多年的大客户苹果，后三波产能将被高通、英特尔、赛灵思、英伟达、amd等厂商预订。

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